skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

Journal Article · · Journal of Experimental and Theoretical Physics
 [1];  [2];  [3];  [4]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  2. National High Magnetic Field Laboratory (United States)
  3. University of Warwick Science Park, Warwick SEMINANO R and D Centre (United Kingdom)
  4. University of Warwick Science Park, Department of Physics (United Kingdom)

Magnetoresistivity {rho}{sub xx} and {rho}{sub xy} and the acoustoelectronic effects are measured in p-Si/SiGe/Si with an impurity concentration p = 1.99 x 10{sup 11} cm{sup -2} in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective g factor on the angle of magnetic field tilt {theta} to the normal to the plane of a two-dimensional p-Si/SiGe/Si channel is determined. A first-order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor {nu} = 2 at {theta} {approx} 59{sup o}-60{sup o}.

OSTI ID:
21443387
Journal Information:
Journal of Experimental and Theoretical Physics, Vol. 111, Issue 3; Other Information: DOI: 10.1134/S1063776110090189; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7761
Country of Publication:
United States
Language:
English