Characteristic features of the interaction of ultrashort resonant laser radiation pulses with thin semiconductor films

Journal Article · Sun Oct 31 00:00:00 EDT 1999 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE1999V029N10ABEH001599· OSTI ID:21437851

Khadzhi, P I; Fedorov, L V ^[1]

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1. Department of Physics and Mathematics, T.G. Shevchenko Pridnestrie State University (Moldova, Republic of)

The relationships governing nonlinear transient transmission and reflection of ultrashort resonant laser radiation pulses with rectangular and Gaussian profiles by a thin semiconductor film were investigated taking into account the exciton-photon interaction and the concentration enhancement of the dipole moment of the exciton transition. It is shown that the transmission of a Gaussian pulse is characterised by the formation of two subpulses with identical areas, which are separated in time and have different profiles. (nonlinear optical phenomena)

• OSTI ID: 21437851
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 29, Issue 10; Other Information: DOI: 10.1070/QE1999v029n10ABEH001599; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIPOLE MOMENTS
EXCITATION
LASER RADIATION
NONLINEAR PROBLEMS
PHOTONS
REFLECTION
RESONANCE
SEMICONDUCTOR MATERIALS
THIN FILMS
TRANSMISSION
BOSONS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ENERGY-LEVEL TRANSITIONS
FILMS
MASSLESS PARTICLES
MATERIALS
RADIATIONS