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Title: Performance of a High-Concentration Erbium-Doped Fiber Amplifier with 100 nm Amplification Bandwidth

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3469620· OSTI ID:21431090
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  1. Center for Advanced Devices and Systems, Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia)

Increasing demand for higher bandwidth has driven the need for higher Wavelength Division Multiplexing (WDM) channels. One of the requirements to achieve this is a broadband amplifier. This paper reports the performance of a broadband, compact, high-concentration and silica-based erbium-doped fiber amplifier. The amplifier optimized to a 2.15 m long erbium-doped fiber with erbium ion concentration of 2000 ppm. The gain spectrum of the amplifier has a measured amplification bandwidth of 100 nm using a 980 nm laser diode with power of 150 mW. This silica-based EDFA shows lower noise figure, higher gain and wider bandwidth in shorter wavelengths compared to Bismuth-based EDFA with higher erbium ion concentration of 3250 ppm at equivalent EDF length. The silica-based EDF shows peak gain at 22 dB and amplification bandwidth between 1520 nm and 1620 nm. The lowest noise figure is 5 dB. The gain is further improved with the implementation of enhanced EDFA configurations.

OSTI ID:
21431090
Journal Information:
AIP Conference Proceedings, Vol. 1250, Issue 1; Conference: PERFIK2009: National physics conference 2009, Malacca (Malaysia), 7-9 Dec 2009; Other Information: DOI: 10.1063/1.3469620; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English