Towards Large Area Growth of 3C-SiC
Journal Article
·
· AIP Conference Proceedings
- Department of Physics, Chemistry and Biology, Linkoeping University, SE-58183, Linkoeping (Sweden)
In this work we have analyzed the possibility of upscaling the growth of 3C-SiC. The growth was done at different temperatures to find limiting mechanisms of the growth rate and to examine the morphology of grown layers. Coverage by 3C-SiC increases when increasing temperature, however more twins appeared. Activation energy of the growth is 130 kcal/mol--showing that growth rate limiting mechanism is sublimation of the source. We discuss the influence of large area 6H-SiC wafers on the formation of 3C-SiC, in which the change in basal plane orientation could also influence the growth of 3C-SiC.
- OSTI ID:
- 21428736
- Journal Information:
- AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518306; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CRYSTAL GROWTH
INTERFACES
LAYERS
MORPHOLOGY
ORIENTATION
RAMAN SPECTRA
SILICON CARBIDES
SUBLIMATION
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
ENERGY
EVAPORATION
PHASE TRANSFORMATIONS
SCATTERING
SILICON COMPOUNDS
SPECTRA
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CRYSTAL GROWTH
INTERFACES
LAYERS
MORPHOLOGY
ORIENTATION
RAMAN SPECTRA
SILICON CARBIDES
SUBLIMATION
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
ENERGY
EVAPORATION
PHASE TRANSFORMATIONS
SCATTERING
SILICON COMPOUNDS
SPECTRA