Growth of ZnO:Al thin films onto different substrates
- National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Magurele, Ilfov (Romania)
In this paper we present some results regarding undoped and doped ZnO thin films deposited on various substrates like glass, silicon and kapton by rf magnetron sputtering. The influence of the amount of aluminum as well as the usage of different substrates on the final photovoltaic properties of the thin films is studied. For this, structural-morphological and optical investigations on the thin films are conducted. It was found that three important factors must be taken into account for adjusting the final desired application intended for the deposited thin films. These factors are: deposition conditions, the nature of both the dopant material and the substrate. A comparison study between undoped and doped case is also realized. Smooth Al doped ZnO thin films with a polycrystalline structure and a lower roughness than undoped ZnO are obtained.
- OSTI ID:
- 21428734
- Journal Information:
- AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518300; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
DOPED MATERIALS
GLASS
OPTICAL PROPERTIES
PHOTOVOLTAIC EFFECT
POLYCRYSTALS
ROUGHNESS
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
ZINC OXIDES
CHALCOGENIDES
CRYSTALS
ELEMENTS
EVALUATION
FILMS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC EFFECT
PHYSICAL PROPERTIES
SEMIMETALS
SURFACE PROPERTIES
ZINC COMPOUNDS