Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr{sub 4}

Journal Article · Mon Nov 01 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3518291· OSTI ID:21428731

Zado, A; Tschumak, E; Lischka, K; As, D J ^[1]; Gerlach, J W ^[2]

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1. University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100 D-33098 Paderborn (Germany)
2. Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

We report on carbon doping of cubic GaN by CBr{sub 4} using plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. The samples consist of a 70 nm thick GaN buffer followed by a 550 nm thick GaN:C layer. Carbon doping is realized with a home-made carbon tetrabromide sublimation source. The CBr{sub 4} beam equivalent pressure was established by a needle valve and was varied between 2x10{sup -9} mbar and 6x10{sup -6} mbar. The growth was controlled by in-situ reflection high energy electron diffraction. The incorporated carbon concentration is obtained from secondary ion mass spectroscopy. Capacitance voltage characteristics were measured using metal-insulator-semiconductor structures. Capacitance voltage measurements on nominally undoped cubic GaN showed n-type conductivity with N{sub D}-N{sub A} = 1x10{sup 17} cm{sup -3}. With increasing CBr{sub 4} flux the conductivity type changes to p-type and for the highest CBr{sub 4} flux N{sub A}-N{sub D} = 4{center_dot}5x10{sup 18} cm{sup -3} was obtained.

• OSTI ID: 21428731
• Journal Information: AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518291; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CARBON
CRYSTAL GROWTH
CUBIC LATTICES
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRON DIFFRACTION
GALLIUM NITRIDES
LAYERS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
REFLECTION
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SUBLIMATION
SUBSTRATES
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EVAPORATION
GALLIUM COMPOUNDS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SILICON COMPOUNDS
SPECTROSCOPY