Fabrication-tolerant 1310 nm laterally-coupled distributed feedback lasers with high side mode suppression ratios

Journal Article · Wed Nov 10 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3521380· OSTI ID:21428722

Millett, R; Dridi, K; Benhsaien, A; Schriemer, H; Hinzer, K; Hall, T ^[1]

---

1. Centre for Research in Photonics, University of Ottawa, 800 King Edward Ave., Ottawa, ON, K1N 6N5 (Canada)

A laterally-coupled distributed feedback (LC-DFB) laser was designed and fabricated using stepper lithography. Such DFB lasers eliminate the need of the commonly required re-growth steps in a conventional DFB laser fabrication process. With LC-DFB lasers, the grating can be lithographically patterned out of the ridge waveguide. High order gratings can enhance the lithographic tolerance for lower resolution patterning, yielding lasers more amenable to mass-manufacturing. 1310 nm InGaAsP/InP LC-DFB laser with third-order gratings was fabricated using i-line 5x stepper lithography. Excellent side mode suppression ratio over 52 dB has been measured with a single mode lasing around 1310 nm.

• OSTI ID: 21428722
• Journal Information: AIP Conference Proceedings, Vol. 1288, Issue 1; Conference: International Commission for Optics topical meeting on emerging trends and novel materials in photonics, Delphi (Greece), 7-9 Oct 2010; Other Information: DOI: 10.1063/1.3521380; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EPITAXY
FABRICATION
FEEDBACK
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASERS
MASKING
RESOLUTION
SCANNING ELECTRON MICROSCOPY
TOLERANCE
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES