Efficient GaInNAs Gain Mirrors for Semiconductor Disk Lasers at 1.18 {mu}m and 1.22 {mu}m

Journal Article · Wed Nov 10 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3521359· OSTI ID:21428720

Korpijaervi, Ville-Markus; Puustinen, Janne; Rautiainen, Jussi; Haerkoenen, Antti; Hakkarainen, Teemu; Guina, Mircea ^[1]

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1. Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-3310, Tampere (Finland)

We report two GaInNAs/GaAs semiconductor disk lasers emitting at the wavelengths of 1180 nm and 1220 nm. The lasers generated 5 W and 7 W output powers, respectively, at a mount temperature of 15 deg. C. Both the gain mirrors were grown by molecular beam epitaxy and consisted of a GaAs/AlAs distributed Bragg reflector and an active region with 10 GaInNAs/GaNAs/GaAs QWs.

• OSTI ID: 21428720
• Journal Information: AIP Conference Proceedings, Vol. 1288, Issue 1; Conference: International Commission for Optics topical meeting on emerging trends and novel materials in photonics, Delphi (Greece), 7-9 Oct 2010; Other Information: DOI: 10.1063/1.3521359; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
GAIN
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASER RADIATION
MIRRORS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
PNICTIDES
RADIATIONS
SCATTERING