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Title: KBiMS{sub 4} (M=Si, Ge): Synthesis, structure, and electronic structure

Journal Article · · Journal of Solid State Chemistry
OSTI ID:21421557
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  1. Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)

Two new bismuth sulfides KBiSiS{sub 4} and KBiGeS{sub 4} have been synthesized by means of the reactive flux method. They adopt the RbBiSiS{sub 4} structure type and crystallize in space group P2{sub 1}/c of the monoclinic system. The structure consists of {sup {infinity}}{sub 2}[BiMS{sub 4}{sup -}] (M=Si, Ge) layers separated by bicapped trigonal-prismatically coordinated K atoms. The M atom is tetrahedrally coordinated to four S atoms and the Bi atom is coordinated to a distorted monocapped trigonal prism of seven S atoms. The optical band gap of 2.25(2) eV for KBiSiS{sub 4} was deduced from the diffuse reflectance spectrum. From a band structure calculation, the optical absorption for KBiSiS{sub 4} originates from the {sup {infinity}}{sub 2}[BiSiS{sub 4}{sup -}] layer. The Si 3p orbitals, Bi 6p orbitals, and S 3p orbitals are highly hybridized near the Fermi level. The orbitals of K have no contributions on both the upper of valence band and the bottom of conduction band. - Graphical abstract: Two new bismuth sulfides KBiSiS{sub 4} and KBiGeS{sub 4} have been synthesized and characterized. The figure is the view down [0 1 0] of the crystal structure of KBiSiS{sub 4}.

OSTI ID:
21421557
Journal Information:
Journal of Solid State Chemistry, Vol. 183, Issue 7; Other Information: DOI: 10.1016/j.jssc.2010.05.003; PII: S0022-4596(10)00192-1; Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English