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Title: Transport of Deposited Atoms throughout Strain-Mediated Self-Assembly

Journal Article · · Physical Review Letters
 [1]; ;  [1];  [2]
  1. School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan)
  2. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720-1760 (United States)

Using enriched isotopes, we developed a method to elucidate the long-standing issue of Ge transport governing the strain-driven self-assembly. Here {sup 76}Ge was employed to form the 2D metastable layer on a Si(001) surface, while the 3D transition and growth were completed by additional evaporation of {sup 70}Ge. This isotope tracing combined with the analysis of the Ge-Ge LO phonon enables the tracking of the origin of Ge atoms and their flow towards the growing islands. This atomic transport was quantified based on the quasiharmonic approximation of Ge-Ge vibrations and described using a rate equation model.

OSTI ID:
21410908
Journal Information:
Physical Review Letters, Vol. 105, Issue 2; Other Information: DOI: 10.1103/PhysRevLett.105.026101; (c) 2010 The American Physical Society; ISSN 0031-9007
Country of Publication:
United States
Language:
English