Influence of encapsulation temperature on Ge:P {delta}-doped layers

Journal Article · Tue Dec 15 00:00:00 EST 2009 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.80.233202· OSTI ID:21386514

Scappucci, G; Simmons, M Y ^[1]; Capellini, G ^[2]

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1. School of Physics and Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, New South Wales 2052 (Australia)
2. Dipartimento di Fisica, Universita di Roma Tre, Via della Vasca Navale 84, 00146 Roma (Italy)

We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P {delta}-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the {delta} layer. We demonstrate that a step-flow growth achieved at {approx}530 deg. C provides the best compromise between high crystal quality and minimal dopant redistribution, with an electron mobility {approx}128 cm{sup 2}/Vs at a carrier density 1.3x10{sup 14} cm{sup -2}, and a 4.2 K phase coherence length of {approx}180 nm.

• OSTI ID: 21386514
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 80, Issue 23; Other Information: DOI: 10.1103/PhysRevB.80.233202; (c) 2009 The American Physical Society; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER DENSITY
COHERENCE LENGTH
CRYSTALS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ENCAPSULATION
EPITAXY
GERMANIUM
LAYERS
PHOSPHORUS ADDITIONS
SEGREGATION
SEMICONDUCTOR MATERIALS
ALLOYS
CRYSTAL GROWTH METHODS
DIMENSIONS
ELEMENTS
LENGTH
MATERIALS
METALS
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES