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Title: Recrystallization of Cu-poor CuInS{sub 2} assisted by metallic Cu or Ag

Journal Article · · Journal of Solid State Chemistry
 [1]; ; ;  [1]
  1. Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

We monitor the recrystallization of Cu-poor CuInS{sub 2} thin films assisted by pure Cu or pure Ag by means of real-time synchrotron-based polychromatic X-ray diffraction. In both cases a new microstructure is formed accompanied by an increase in grain size. In the case of Cu, the onset temperature of the thin-film recrystallization is higher than 370 deg. C. In the case of Ag, the thin-film recrystallization comes to an end at 270 deg. C. The Ag-assisted recrystallization occurs in the presence of the body-centered cubic beta-Ag{sub 2}S phase. We find that domain growth and diffusion of silver into the film occur simultaneously. - Graphical abstract Keywords: Recrystallization; Thin-film solar cells; Energy-dispersive x-ray diffraction: In-situ monitoring by means of energy-dispersive X-ray diffraction of the thin-film recrystallization of Cu-poor CuInS{sub 2} assisted by metallic Ag.

OSTI ID:
21372556
Journal Information:
Journal of Solid State Chemistry, Vol. 183, Issue 4; Other Information: DOI: 10.1016/j.jssc.2010.01.023; PII: S0022-4596(10)00037-X; Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English