Anisotropic Transport of Electrons in a Novel FET Channel with Chains of InGaAs Nano-Islands Embedded along Quasi-Periodic Multi-Atomic Steps on Vicinal (111)B GaAs

Journal Article · Mon Jan 04 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3295401· OSTI ID:21371401

Akiyama, Y; Kawazu, T ^[1]; Noda, T ^[1]; Sakaki, H ^[1]

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1. National Institute for Materials Science, Tsukuba-shi, Ibaraki 305-0047 (Japan)

We have studied electron transport in n-AlGaAs/GaAs heterojunction FET channels, in which chains of InGaAs nano-islands are embedded along quasi-periodic steps. By using two samples, conductance G{sub para}(V{sub g}) parallel to the steps and G{sub perp}(V{sub g}) perpendicular to them were measured at 80 K as functions of gate voltage V{sub g}. At sufficiently high V{sub g}, G{sub para} at 80 K is several times as high as G{sub perp}, which manifests the anisotropic two-dimensional transport of electrons. When V{sub g} is reduced to -0.7 V, G{sub perp} almost vanishes, while {sub Gpara} stays sizable unless V{sub g} is set below -0.8 V. These results indicate that 'inter-chain' barriers play stronger roles than 'intra-chain' barriers.

• OSTI ID: 21371401
• Journal Information: AIP Conference Proceedings, Vol. 1199, Issue 1; Conference: 29. international conference on the physics of semiconductors, Rio de Janeiro (Brazil), 27 Jul - 1 Aug 2008; Other Information: DOI: 10.1063/1.3295401; (c) 2009 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ANISOTROPY
ELECTRIC CONDUCTIVITY
ELECTRON GAS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
N-TYPE CONDUCTORS
PERIODICITY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
TRANSISTORS
VARIATIONS