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Title: In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3464171· OSTI ID:21367028
; ; ; ; ; ;  [1];  [2]
  1. Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)
  2. Venture Business Laboratory (VBL), Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

Superconducting NdFeAs(O,F) thin films were grown on GaAs substrates by molecular beam epitaxy. Films grown with a sufficiently long growth time exhibited a clear superconducting transition with an onset temperature up to 48 K and zero resistance temperature up to 42 K without the need of an ex situ annealing process. Electron probe microanalysis and Hall coefficient measurements indicated that the superconducting films are doped with fluorine, and depth-profile analysis by Auger electron spectroscopy revealed the formation of a NdOF layer near the surface, which is probably connected with the fluorine doping.

OSTI ID:
21367028
Journal Information:
Applied Physics Letters, Vol. 97, Issue 4; Other Information: DOI: 10.1063/1.3464171; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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