Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth
- Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)
- Synchrotron Radiation Research Center, Japan Atomic Energy Agency, Hyogo 679-5148 (Japan)
Real-time three-dimensional reciprocal space mapping (3D-RSM) measurement during In{sub 0.12}Ga{sub 0.88}As/GaAs(001) molecular beam epitaxial growth has been performed to investigate anisotropy in relaxation processes along [110] and [110] directions caused by alpha and beta misfit dislocations (MDs). Anisotropies, strain relaxation, and crystal quality in both directions were simultaneously evaluated via the position and broadness of 022 diffraction in 3D-RSM. In the small-thickness region, strain relaxation caused by alpha-MDs is higher than that caused by beta-MDs, and therefore crystal quality along [110] is worse than that along [110]. Rapid relaxation along both [110] and [110] directions occurs at almost the same thickness. After rapid relaxation, anisotropy in strain relaxation gradually decreases, whereas crystal quality along [110] direction, presumably due to beta-MDs, becomes better that along [110] direction and the ratio does not decay with thickness.
- OSTI ID:
- 21367025
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 4; Other Information: DOI: 10.1063/1.3458695; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANISOTROPY
CRYSTAL GROWTH
CRYSTALS
DIFFRACTION
DISLOCATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
STRESS RELAXATION
THICKNESS
THREE-DIMENSIONAL CALCULATIONS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIMENSIONS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LINE DEFECTS
MATERIALS
PNICTIDES
RELAXATION
SCATTERING