Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO{sub 2}/Si structure

Journal Article · Mon Jul 26 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3469932· OSTI ID:21367020

Chongqi, Yu; Hui, Wang ^[1]

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1. Department of Physics, State Key Laboratory on Fiber Optic Local Area Communication Networks and Advanced Optical Communication Systems, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai 200240 (China)

Recent study shows the resistance of a metal-oxide-semiconductor (MOS) structure can be controlled by a laser via a bipolar-resistance effect (BRE). Based on this BRE phenomenon, we find an overlapped offset effect which is induced by an external bias applying to the structure. This offset effect features with a moveable equilibrium point of BRE, suggesting a combined control to the resistance and adding functionality to the MOS-based photoelectric devices.

• OSTI ID: 21367020
• Journal Information: Applied Physics Letters, Vol. 97, Issue 4; Other Information: DOI: 10.1063/1.3469932; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT
ELECTRIC CONDUCTIVITY
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
CHALCOGENIDES
ELECTRICAL PROPERTIES
ELEMENTS
LASERS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
SOLID STATE LASERS
TRANSITION ELEMENTS