Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors

Journal Article · Mon Jun 21 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3457388· OSTI ID:21366993

Yenting, Chen; Han, Zhao; Yanzhen, Wang; Fei, Xue; Fei, Zhou; Lee, Jack C ^[1]

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1. Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Texas 78758 (United States)

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.

• OSTI ID: 21366993
• Journal Information: Applied Physics Letters, Vol. 96, Issue 25; Other Information: DOI: 10.1063/1.3457388; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON TETRAFLUORIDE
DIELECTRIC MATERIALS
FLUORINE
GALLIUM ARSENIDES
HAFNIUM OXIDES
HYSTERESIS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ION MICROPROBE ANALYSIS
MASS SPECTRA
MASS SPECTROSCOPY
MOSFET
SEMICONDUCTOR MATERIALS
X-RAY PHOTOELECTRON SPECTROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL ANALYSIS
ELECTRON SPECTROSCOPY
ELEMENTS
FIELD EFFECT TRANSISTORS
FLUORINATED ALIPHATIC HYDROCARBONS
GALLIUM COMPOUNDS
HAFNIUM COMPOUNDS
HALOGENATED ALIPHATIC HYDROCARBONS
HALOGENS
INDIUM COMPOUNDS
MATERIALS
MICROANALYSIS
MOS TRANSISTORS
NONDESTRUCTIVE ANALYSIS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SPECTRA
SPECTROSCOPY
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS