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Title: Monolayer graphene growth on sputtered thin film platinum

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3254193· OSTI ID:21361939
; ;  [1];  [2]
  1. Department of Electrical Engineering, KAIST, 335 Science Road, Yuseong, Daejeon 305-701 (Korea, Republic of)
  2. Center for Advanced Instrumentation, Korea Research Institute of Standards and Science (KRISS), 209 Gajeong Road, Yuseong, Daejeon 305-600 (Korea, Republic of)

It is demonstrated that sputtered thin film platinum (Pt) can be used as a catalytic metal for graphene growth on metal. During the crystallization annealing, the sputtered Pt is crystallized mostly into Pt (111) orientation, maintaining excellent surface roughness with no sign of agglomeration. The relatively lower carbon solubility in Pt and the good surface roughness of the thin film Pt enable us to form a uniform monolayer graphene on Pt over the entire region of the thin film Pt/SiO{sub 2}/Si substrate by carbon dissolution and segregation method processed in a methane ambient. The monolayer graphene grown on Pt has been successfully transferred to SiO{sub 2}/Si substrate by simple wet etching of Pt. The results of Raman spectroscopic and scanning tunneling microscopic measurements of the synthesized graphene layer are presented.

OSTI ID:
21361939
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 10; Other Information: DOI: 10.1063/1.3254193; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English