Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN

Journal Article · Sun Nov 15 00:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3257259· OSTI ID:21361937

Luo, W B; Zhu, J; Chen, H; Wang, X P; Zhang, Y; Li, Y R ^[1]

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1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Epitaxial SrTiO{sub 3} films were fabricated by laser molecular beam epitaxy on bare and TiO{sub 2} buffered GaN(0002), respectively. The whole deposition processes were in situ monitored by reflection high energy electron diffraction (RHEED). X-ray diffraction (XRD) was carried out to study the growth orientation and crystalline quality of STO films. The interfacial characters and epitaxial relationships were also investigated by high revolution transition electron microscope and selected area electron diffraction (SAED). According to the RHEED observation, the lowest epitaxy temperature of STO on TiO{sub 2} buffered GaN was decreased compared with the direct deposited one. The epitaxial relationship was (111)[110]STO//(0002)[1120]GaN in both cases as confirmed by RHEED, XRD, and SAED. The full width at half maximum of omega-scan and PHI-scan of STO on TiO{sub 2} buffered GaN was reduced compared with that deposited on bare GaN, indicating that epitaxial quality of STO film is improved by inserting TiO{sub 2} layer. In summary, the lattice mismatch was reduced by inserting rutile TiO{sub 2}. As a result, the crystalline temperature was reduced and enhanced epitaxial quality of STO thin film was obtained.

• OSTI ID: 21361937
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 10; Other Information: DOI: 10.1063/1.3257259; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEPOSITION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPES
GALLIUM NITRIDES
LASER MATERIALS
MOLECULAR BEAM EPITAXY
RUTILE
SEMICONDUCTOR MATERIALS
STRONTIUM TITANATES
THIN FILMS
TITANIUM OXIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON MICROSCOPY
EPITAXY
FILMS
GALLIUM COMPOUNDS
MATERIALS
MICROSCOPES
MICROSCOPY
MINERALS
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RADIOACTIVE MATERIALS
RADIOACTIVE MINERALS
SCATTERING
STRONTIUM COMPOUNDS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS