Thermal stability of irradiation-induced point defects in cubic silicon carbide

Journal Article · Thu Oct 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3245397· OSTI ID:21361887

Lefevre, Jeremie; Esnouf, Stephane; Petite, Guillaume ^[1]; Costantini, Jean-Marc ^[2]

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1. Laboratoire des Solides Irradies, Ecole Polytechnique, CEA-IRAMIS, CNRS, F-91128 Palaiseau Cedex (France)
2. CEA, DEN, SRMA, F-91191 Gif-sur-Yvette Cedex (France)

This work aims specifically at studying the evolution of point defects induced by electron irradiation in the cubic polytype of SiC (3C-SiC) at temperatures ranging from 10 to 1450 K by means of photoluminescence (PL) spectroscopy. We identified a first annealing stage between 200 and 245 K, which probably results from migration of interstitials in the carbon sublattice. Moreover, we confirmed the high thermal stability of defect-related PL signals up to about 1100 K and calculated the activation energies associated with their annihilation. Finally, we studied the effect of a high temperature treatment at 1400 K on the D{sub I} center PL intensity in a single-crystal sample irradiated by electrons below the threshold displacement energy of the silicon sublattice. This allows checking the relevance of recent defect models based upon the migration of atoms in the carbon sublattice during the irradiation process. We conclude that the D{sub I} center does not involve the silicon vacancy and could be assigned to an isolated silicon antisite Si{sub C}.

• OSTI ID: 21361887
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 8; Other Information: DOI: 10.1063/1.3245397; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANNEALING
ANNIHILATION
CARBON
ELECTRON BEAMS
INTERSTITIALS
IRRADIATION
MONOCRYSTALS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
VACANCIES
BEAMS
CARBIDES
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELEMENTS
EMISSION
ENERGY
HEAT TREATMENTS
INTERACTIONS
LEPTON BEAMS
LUMINESCENCE
MATERIALS
NONMETALS
PARTICLE BEAMS
PARTICLE INTERACTIONS
PHOTON EMISSION
POINT DEFECTS
SEMIMETALS
SILICON COMPOUNDS
TEMPERATURE RANGE