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Title: Growth and properties of epitaxial GdN

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3211290· OSTI ID:21361841
; ; ; ;  [1]; ; ;  [2];  [3]
  1. MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University, P.O. Box 600, Wellington 6140 (New Zealand)
  2. MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Private Bag 4800, Christchurch 8140 (New Zealand)
  3. Institut Neel, CNRS/UJF, BP 166, 38042 Grenoble Cedex 9 (France)

Epitaxial gadolinium nitride films with well-oriented crystallites of up to 30 nm have been grown on yttria-stabilized zirconia substrates using a plasma-assisted pulsed laser deposition technique. We observe that the epitaxial GdN growth proceeds on top of a gadolinium oxide buffer layer that forms via reaction between deposited Gd and mobile oxygen from the substrate. Hall effect measurements show the films are electron doped to degeneracy, with carrier concentrations of 4x10{sup 20} cm{sup -3}. Magnetic measurements establish a T{sub C} of 70 K with a coercive field that can be tuned from 200 Oe to as low as 10 Oe.

OSTI ID:
21361841
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 6; Other Information: DOI: 10.1063/1.3211290; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English