Dopant activation in ion implanted silicon by microwave annealing

Journal Article · Tue Dec 01 00:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3260245· OSTI ID:21359387

Alford, T L; Thompson, D C; Mayer, J W ^[1]; Theodore, N David ^[2]

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1. School of Materials, Arizona State University, Tempe, Arizona 85287 (United States)
2. Silicon Technology Solutions, Freescale Semiconductor Inc., 2100 East Elliot Rd., Tempe, Arizona 85284 (United States)

Microwaves are used as a processing alternative for the electrical activation of ion implanted dopants and the repair of ion implant damage within silicon. Rutherford backscattering spectra demonstrate that microwave heating reduces the damage resulting from ion implantation of boron or arsenic into silicon. Cross-section transmission electron microscopy and selective area electron diffraction patterns demonstrate that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Sheet resistance readings indicate the time required for boron or arsenic electrical activation within implanted silicon. Hall measurements demonstrate the extent of dopant activation after microwave heating of implanted silicon. Physical and electrical characterization determined that the mechanism of recrystallization in arsenic implanted silicon is solid phase epitaxial regrowth. The boron implanted silicon samples did not result in enough lattice damage to amorphize the silicon lattice and resulted in low boron activation during microwave annealing even though recrystallization of the Si lattice damage did take place. Despite low boron activation levels, the level of boron activation in this work was higher than that expected from traditional annealing techniques. The kinetics of microwave heating and its effects on implanted Si are also discussed.

• OSTI ID: 21359387
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 11; Other Information: DOI: 10.1063/1.3260245; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARSENIC
BORON
CROSS SECTIONS
DOPED MATERIALS
ELECTRON DIFFRACTION
EPITAXY
HALL EFFECT
ION IMPLANTATION
MICROWAVE HEATING
MICROWAVE RADIATION
RECRYSTALLIZATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
HEAT TREATMENTS
HEATING
MATERIALS
MICROSCOPY
RADIATIONS
SCATTERING
SEMIMETALS
SPECTROSCOPY