Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

Journal Article · Sat Aug 01 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3191175· OSTI ID:21359357

Cervera, C; Rodriguez, J B; Perez, J P; Aiet-Kaci, H; Chaghi, R; Christol, P ^[1]; Konczewicz, L; Contreras, S ^[2]

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1. Institut d'Electronique du Sud (IES), UMR CNRS 5214, Case 067, Universite Montpellier 2, 34095 Montpellier Cedex 05 (France)
2. Groupe d'Etude des Semiconducteurs (GES), UMR CNRS 5650, Case 074, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.

• OSTI ID: 21359357
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 3; Other Information: DOI: 10.1063/1.3191175; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRIC POTENTIAL
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
HALL EFFECT
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTODIODES
SEMICONDUCTOR MATERIALS
SUBSTRATES
SUPERLATTICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TEMPERATURE RANGE