Effects of activation by proton irradiation on silicon particle detector electric characteristics
Abstract
After irradiation with 7 and 9 MeV protons, activation-induced effects were encountered in measurements of current-voltage (IV) and capacitance-voltage (CV) characteristics for Czochralski and float-zone grown silicon particle detectors prepared on printed circuit boards with copper electrodes. With the present detector construction, the {sup 30}Si(p,n){sup 30}P and {sup 63}Cu(p,n){sup 63}Zn reactions induce dominant interference in such measurements. The daughter nuclides are positron emitters with half-lives of 2.5 and 38.5 min, respectively, and the slowing down of the emitted positrons generates a significantly large concentration of electron-hole pairs in the detector volume increasing the leakage current level and decreasing the breakdown voltage. The observed time-dependent characteristics were verified by modeling the activation of the detector structure and the resulting leakage current. As a result, the electrical measurements cannot be performed immediately after irradiation due to silicon activation, and, generally, materials becoming easily activated should be avoided in the detector concept.
- Authors:
-
- Department of Physics, University of Helsinki, P.O. Box 64, FI-00014 University of Helsinki (Finland)
- Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3000, FI-02015 TKK (Finland)
- Helsinki Institute of Physics, University of Helsinki, P.O. Box 64, FI-00014 University of Helsinki (Finland)
- Publication Date:
- OSTI Identifier:
- 21359339
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 2; Other Information: DOI: 10.1063/1.3168436; (c) 2009 American Institute of Physics; Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; COPPER; COPPER 63 TARGET; CRYSTAL GROWTH; HALF-LIFE; LEAKAGE CURRENT; MEV RANGE 01-10; NEUTRONS; PHOSPHORUS 30; POSITRONS; PROTON BEAMS; PROTON REACTIONS; PROTONS; RECOMBINATION; SILICON; SILICON 30 TARGET; SIMULATION; TIME DEPENDENCE; ZINC 63; ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BARYON REACTIONS; BARYONS; BEAMS; BETA DECAY RADIOISOTOPES; BETA-PLUS DECAY RADIOISOTOPES; CHARGED-PARTICLE REACTIONS; CURRENTS; ELECTRIC CURRENTS; ELECTRON CAPTURE RADIOISOTOPES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; EVEN-ODD NUCLEI; FERMIONS; HADRON REACTIONS; HADRONS; INTERMEDIATE MASS NUCLEI; ISOTOPES; LEPTONS; LIGHT NUCLEI; MATTER; METALS; MEV RANGE; MINUTES LIVING RADIOISOTOPES; NUCLEAR REACTIONS; NUCLEI; NUCLEON BEAMS; NUCLEON REACTIONS; NUCLEONS; ODD-ODD NUCLEI; PARTICLE BEAMS; PHOSPHORUS ISOTOPES; RADIOISOTOPES; SEMIMETALS; TARGETS; TRANSITION ELEMENTS; ZINC ISOTOPES
Citation Formats
Vaeyrynen, S, Raeisaenen, J, Tikkanen, P, Kassamakov, I, and Tuominen, E. Effects of activation by proton irradiation on silicon particle detector electric characteristics. United States: N. p., 2009.
Web. doi:10.1063/1.3168436.
Vaeyrynen, S, Raeisaenen, J, Tikkanen, P, Kassamakov, I, & Tuominen, E. Effects of activation by proton irradiation on silicon particle detector electric characteristics. United States. https://doi.org/10.1063/1.3168436
Vaeyrynen, S, Raeisaenen, J, Tikkanen, P, Kassamakov, I, and Tuominen, E. 2009.
"Effects of activation by proton irradiation on silicon particle detector electric characteristics". United States. https://doi.org/10.1063/1.3168436.
@article{osti_21359339,
title = {Effects of activation by proton irradiation on silicon particle detector electric characteristics},
author = {Vaeyrynen, S and Raeisaenen, J and Tikkanen, P and Kassamakov, I and Tuominen, E},
abstractNote = {After irradiation with 7 and 9 MeV protons, activation-induced effects were encountered in measurements of current-voltage (IV) and capacitance-voltage (CV) characteristics for Czochralski and float-zone grown silicon particle detectors prepared on printed circuit boards with copper electrodes. With the present detector construction, the {sup 30}Si(p,n){sup 30}P and {sup 63}Cu(p,n){sup 63}Zn reactions induce dominant interference in such measurements. The daughter nuclides are positron emitters with half-lives of 2.5 and 38.5 min, respectively, and the slowing down of the emitted positrons generates a significantly large concentration of electron-hole pairs in the detector volume increasing the leakage current level and decreasing the breakdown voltage. The observed time-dependent characteristics were verified by modeling the activation of the detector structure and the resulting leakage current. As a result, the electrical measurements cannot be performed immediately after irradiation due to silicon activation, and, generally, materials becoming easily activated should be avoided in the detector concept.},
doi = {10.1063/1.3168436},
url = {https://www.osti.gov/biblio/21359339},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 106,
place = {United States},
year = {Wed Jul 15 00:00:00 EDT 2009},
month = {Wed Jul 15 00:00:00 EDT 2009}
}