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Title: Photoelectric effects of ultraviolet fast response and high sensitivity in LiNbO{sub 3} single crystal

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3183957· OSTI ID:21359308
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  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190 (China)

The photoelectric effects in LiNbO{sub 3} (LNO) single crystal have been systematically studied with the two kinds of LNO wafers of tilt of 10 deg. and untilted at the ambient temperature. The ultrafast response photoelectric effect of 120 ps rise time was observed in 10 deg. tilted LNO single crystal with a 266 nm laser pulse of 25 ps duration. The photocurrent responsivity of untilted LNO with an interdigitated electrode of 10 mum finger width and 10 mum interspacing is 17.1 mA/W under the irradiation of 300 nm wavelength UV light at 10 V bias. The noise current under sunlight is only 73 pA at 10 V bias. The experimental results suggest that the LNO single crystal is one of the promising materials for photodetectors working in UV region.

OSTI ID:
21359308
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 2; Other Information: DOI: 10.1063/1.3183957; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English