Molecular-dynamics simulations of stacking-fault-induced dislocation annihilation in prestrained ultrathin single-crystalline copper films
- Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts 01003-3110 (United States)
We report results of large-scale molecular-dynamics simulations of dynamic deformation under biaxial tensile strain of prestrained single-crystalline nanometer-scale-thick face-centered cubic (fcc) copper films. Our results show that stacking faults, which are abundantly present in fcc metals, may play a significant role in the dissociation, cross slip, and eventual annihilation of dislocations in small-volume structures of fcc metals. The underlying mechanisms are mediated by interactions within and between extended dislocations that lead to annihilation of Shockley partial dislocations or formation of perfect dislocations. Our findings demonstrate dislocation starvation in small-volume structures with ultrathin film geometry, governed by a mechanism other than dislocation escape to free surfaces, and underline the significant role of geometry in determining the mechanical response of metallic small-volume structures.
- OSTI ID:
- 21356139
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 9; Other Information: DOI: 10.1063/1.3120916; (c) 2009 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atomic-Scale Study of Dislocation-Stacking Fault Tetrahedron Interactions. Part I: Mechanisms.
Short-range dislocation interactions using molecular dynamics: Annihilation of screw dislocations
Related Subjects
ANNIHILATION
COPPER
DEFORMATION
DISLOCATIONS
DISSOCIATION
FCC LATTICES
MOLECULAR DYNAMICS METHOD
MONOCRYSTALS
NANOSTRUCTURES
SIMULATION
STACKING FAULTS
THIN FILMS
CALCULATION METHODS
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALS
CUBIC LATTICES
ELEMENTS
FILMS
INTERACTIONS
LINE DEFECTS
METALS
PARTICLE INTERACTIONS
TRANSITION ELEMENTS