Increase of the deposition rate in reactive sputtering of metal oxides using a ceramic nitride target

Journal Article · Fri May 01 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3124380· OSTI ID:21356132

Severin, D; Wuttig, M ^[1]; Kappertz, O; Nyberg, T; Berg, S ^[2]; Pflug, A ^[3]

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1. Institute of Physics (IA), RWTH Aachen University, 52056 Aachen (Germany)
2. Solid State Electronics Division, Uppsala Universitet, 75120 Uppsala (Sweden)
3. Fraunhofer IST, 38108 Braunschweig (Germany)

We present a method to eliminate hysteresis effects and to increase the deposition rate for the reactive sputtering of metal oxides. This is achieved by using a ceramic nitride target in an argon-oxygen atmosphere. Although the use of a ceramic nitride target leads to pronounced changes of the processing characteristics, incorporation of nitrogen into the growing film is very small. These observations can be theoretically predicted using an extension of Berg's model [S. Berg and T. Nyberg, Thin Solid Films 476, 215 (2005)] to two different reactive gases and a compound target.

• OSTI ID: 21356132
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 9; Other Information: DOI: 10.1063/1.3124380; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON
ATMOSPHERES
CERAMICS
DEPOSITION
HYSTERESIS
NITRIDES
NITROGEN
OXIDES
OXYGEN
SPUTTERING
THIN FILMS
TITANIUM COMPOUNDS
CHALCOGENIDES
ELEMENTS
FILMS
FLUIDS
GASES
NITROGEN COMPOUNDS
NONMETALS
OXYGEN COMPOUNDS
PNICTIDES
RARE GASES
TRANSITION ELEMENT COMPOUNDS