Ultrafast photovoltaic effects in miscut Nb-doped SrTiO{sub 3} single crystals

Journal Article · Wed Apr 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3116555· OSTI ID:21356096

Na, Zhou; Kun, Zhao; Hao, Liu; Zhiqing, Lu; Hui, Zhao; Lu, Tian; Wenwei, Liu; Songqing, Zhao ^[1]

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1. Department of Mathematics and Physics, China University of Petroleum, Beijing 102249 (China) and International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016 (China)

Picosecond photovoltaic effect in miscut Nb-doped SrTiO{sub 3} single crystal has been observed under ultraviolet pulsed laser irradiation at ambient temperature without an applied bias. The 10%-90% rise time and the full width at half maximum are 828 and 670 ps, respectively, which is faster than that of exact cut Nb-doped SrTiO{sub 3} single crystal. A model based on terrace structure is put forward to explain the observation.

• OSTI ID: 21356096
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 8; Other Information: DOI: 10.1063/1.3116555; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMBIENT TEMPERATURE
DOPED MATERIALS
LASER RADIATION
MONOCRYSTALS
NIOBIUM
PHOTOVOLTAIC EFFECT
PULSE RISE TIME
STRONTIUM TITANATES
ULTRAVIOLET RADIATION
ALKALINE EARTH METAL COMPOUNDS
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
MATERIALS
METALS
OXYGEN COMPOUNDS
PHOTOELECTRIC EFFECT
RADIATIONS
REFRACTORY METALS
STRONTIUM COMPOUNDS
TIMING PROPERTIES
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS