Effect of high-energy electron beam irradiation on the properties of ZnO thin films prepared by magnetron sputtering

Journal Article · Mon Jun 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3149783· OSTI ID:21352252

Yun, Eui-Jung ^[1]; Jung, Jin Woo ^[2]; Han, Young Hwan; Kim, Min-Wan; Lee, Byung Cheol ^[3]

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1. Department of Semiconductor and Display Engineering and Department of System and Control Engineering, Hoseo University, Asan, Chungnam 336-795 (Korea, Republic of)
2. Department of Semiconductor and Display Engineering, Hoseo University, Asan, Chungnam 336-795 (Korea, Republic of)
3. Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, Daejeon 305-353 (Korea, Republic of)

In this work we demonstrate that high-energy electron beam irradiation (HEEBI) performed in air at room temperature affects remarkably the electrical, optical, and structural properties of undoped ZnO films prepared on SiO{sub 2} substrates by magnetron sputtering techniques. Hall and photoluminescence measurements revealed that the p-type conductivity was realized in HEEBI treated films with low dose of 10{sup 14} electrons/cm{sup 2} and converted to n-type conductivity with further increase in the amount of dose. X-ray photoelectron spectroscopy showed that indiffusion of Si from the substrate as well as N from the ambient into the films took place as a result of HEEBI treatment at high and low doses, respectively. X-ray diffraction analysis indicated that all as-grown films were found to have compressive stress, which was relieved to some extent by HEEBI treatment with high dose of 10{sup 16} electrons/cm{sup 2}. It was also found that better crystallinity with a bigger grain size was observed in HEEBI treated ZnO films with a higher dose. Field emission scanning electron microscope showed that HEEBI treated films with low dose had surface morphologies with big rodlike shapes. The major acceptorlike defects were determined to be oxygen interstitial and zinc vacancy. A model was proposed in terms of O, Zn, N, and Si diffusion to explain the observed results.

• OSTI ID: 21352252
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 12; Other Information: DOI: 10.1063/1.3149783; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
FIELD EMISSION
GRAIN SIZE
HALL EFFECT
INTERSTITIALS
OXYGEN
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICA
SILICON OXIDES
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
VACANCIES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC
ZINC OXIDES
BEAMS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
FILMS
LEPTON BEAMS
LUMINESCENCE
MATERIALS
METALS
MICROSCOPY
MICROSTRUCTURE
MINERALS
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHOTOELECTRON SPECTROSCOPY
PHOTON EMISSION
PHYSICAL PROPERTIES
POINT DEFECTS
SCATTERING
SILICON COMPOUNDS
SIZE
SPECTROSCOPY
TEMPERATURE RANGE
ZINC COMPOUNDS