Structural and optical properties of Mn-doped CdS thin films prepared by ion implantation

Journal Article · Mon Jun 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3151712· OSTI ID:21352250

Chandramohan, S; Tripathi, J K; Sarangi, S N; Som, T ^[1]; Kanjilal, A ^[2]; Sathyamoorthy, R ^[3]

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1. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)
2. Institute for Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, 01328 Dresden (Germany)
3. Department of Physics, Kongunadu Arts and Science College, Coimbatore 641 029 (India)

We report on structural and optical properties of Mn-doped CdS thin films prepared by 190 keV Mn-ion implantation at different temperatures. Mn-ion implantation in the fluence range of 1x10{sup 13}-1x10{sup 16} ions cm{sup -2} does not lead to the formation of any secondary phase. However, it induces structural disorder, causing a decrease in the optical band gap. This is addressed on the basis of band tailing due to creation of localized energy states and Urbach energy calculations. Mn-doped samples exhibit a new band in their photoluminescence spectra at 2.22 eV, which originates from the d-d({sup 4}T{sub 1}->{sup 6}A{sub 1}) transition of tetrahedrally coordinated Mn{sup 2+} ions.

• OSTI ID: 21352250
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 12; Other Information: DOI: 10.1063/1.3151712; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SULFIDES
DOPED MATERIALS
ENERGY GAP
ION IMPLANTATION
MANGANESE
MANGANESE IONS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
THIN FILMS
CADMIUM COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
ELEMENTS
EMISSION
FILMS
INORGANIC PHOSPHORS
IONS
LUMINESCENCE
MATERIALS
METALS
PHOSPHORS
PHOTON EMISSION
PHYSICAL PROPERTIES
SULFIDES
SULFUR COMPOUNDS
TRANSITION ELEMENTS