Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film
Abstract
This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/HfO{sub 2} system, crucial data for understanding the electrical properties of Ta-C-N/HfO{sub 2}. Combinatorial Ta-C-N 'library' (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N){sub x} forms and extends to compositions (0.3<=Ta<=0.5 and 0.57<=Ta<=0.67) that were previously unknown. The thermal stability of the Ta-C-N/HfO{sub 2} library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/HfO{sub 2}/SiO{sub 2}/Si exhibiting good thermal stability up to 950 deg. C.
- Authors:
-
- National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899 (United States)
- Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States)
- IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Chemistry, KU Leuven, 3000 Leuven (Belgium)
- Publication Date:
- OSTI Identifier:
- 21347443
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 96; Journal Issue: 19; Other Information: DOI: 10.1063/1.3428788; (c) 2010 American Institute of Physics; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CARBON COMPOUNDS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; ELECTRODES; ELECTRON PROBES; FLUORESCENCE; HAFNIUM OXIDES; MAGNETRONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SOLID SOLUTIONS; SPECTROSCOPY; SPUTTERING; TANTALUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY FLUORESCENCE ANALYSIS; CHALCOGENIDES; CHEMICAL ANALYSIS; COHERENT SCATTERING; DIFFRACTION; DISPERSIONS; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EMISSION; EQUIPMENT; FILMS; HAFNIUM COMPOUNDS; HOMOGENEOUS MIXTURES; LUMINESCENCE; MATERIALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MIXTURES; NONDESTRUCTIVE ANALYSIS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PROBES; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SOLUTIONS; TRANSITION ELEMENT COMPOUNDS; X-RAY EMISSION ANALYSIS
Citation Formats
Chang, K -S, Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, Green, M L, Levin, I, Hattrick-Simpers, J R, Jaye, C, Fischer, D A, Takeuchi, I, and De Gendt, S. Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film. United States: N. p., 2010.
Web. doi:10.1063/1.3428788.
Chang, K -S, Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, Green, M L, Levin, I, Hattrick-Simpers, J R, Jaye, C, Fischer, D A, Takeuchi, I, & De Gendt, S. Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film. United States. https://doi.org/10.1063/1.3428788
Chang, K -S, Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, Green, M L, Levin, I, Hattrick-Simpers, J R, Jaye, C, Fischer, D A, Takeuchi, I, and De Gendt, S. 2010.
"Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film". United States. https://doi.org/10.1063/1.3428788.
@article{osti_21347443,
title = {Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film},
author = {Chang, K -S and Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 and Green, M L and Levin, I and Hattrick-Simpers, J R and Jaye, C and Fischer, D A and Takeuchi, I and De Gendt, S},
abstractNote = {This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/HfO{sub 2} system, crucial data for understanding the electrical properties of Ta-C-N/HfO{sub 2}. Combinatorial Ta-C-N 'library' (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N){sub x} forms and extends to compositions (0.3<=Ta<=0.5 and 0.57<=Ta<=0.67) that were previously unknown. The thermal stability of the Ta-C-N/HfO{sub 2} library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/HfO{sub 2}/SiO{sub 2}/Si exhibiting good thermal stability up to 950 deg. C.},
doi = {10.1063/1.3428788},
url = {https://www.osti.gov/biblio/21347443},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 96,
place = {United States},
year = {Mon May 10 00:00:00 EDT 2010},
month = {Mon May 10 00:00:00 EDT 2010}
}