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Title: Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film

Abstract

This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/HfO{sub 2} system, crucial data for understanding the electrical properties of Ta-C-N/HfO{sub 2}. Combinatorial Ta-C-N 'library' (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N){sub x} forms and extends to compositions (0.3<=Ta<=0.5 and 0.57<=Ta<=0.67) that were previously unknown. The thermal stability of the Ta-C-N/HfO{sub 2} library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/HfO{sub 2}/SiO{sub 2}/Si exhibiting good thermal stability up to 950 deg. C.

Authors:
 [1]; ; ; ; ;  [1];  [2];  [3]
  1. National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899 (United States)
  2. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States)
  3. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Chemistry, KU Leuven, 3000 Leuven (Belgium)
Publication Date:
OSTI Identifier:
21347443
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 96; Journal Issue: 19; Other Information: DOI: 10.1063/1.3428788; (c) 2010 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON COMPOUNDS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; ELECTRODES; ELECTRON PROBES; FLUORESCENCE; HAFNIUM OXIDES; MAGNETRONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SOLID SOLUTIONS; SPECTROSCOPY; SPUTTERING; TANTALUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY FLUORESCENCE ANALYSIS; CHALCOGENIDES; CHEMICAL ANALYSIS; COHERENT SCATTERING; DIFFRACTION; DISPERSIONS; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EMISSION; EQUIPMENT; FILMS; HAFNIUM COMPOUNDS; HOMOGENEOUS MIXTURES; LUMINESCENCE; MATERIALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MIXTURES; NONDESTRUCTIVE ANALYSIS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PROBES; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SOLUTIONS; TRANSITION ELEMENT COMPOUNDS; X-RAY EMISSION ANALYSIS

Citation Formats

Chang, K -S, Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, Green, M L, Levin, I, Hattrick-Simpers, J R, Jaye, C, Fischer, D A, Takeuchi, I, and De Gendt, S. Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film. United States: N. p., 2010. Web. doi:10.1063/1.3428788.
Chang, K -S, Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, Green, M L, Levin, I, Hattrick-Simpers, J R, Jaye, C, Fischer, D A, Takeuchi, I, & De Gendt, S. Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film. United States. https://doi.org/10.1063/1.3428788
Chang, K -S, Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, Green, M L, Levin, I, Hattrick-Simpers, J R, Jaye, C, Fischer, D A, Takeuchi, I, and De Gendt, S. 2010. "Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film". United States. https://doi.org/10.1063/1.3428788.
@article{osti_21347443,
title = {Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film},
author = {Chang, K -S and Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 and Green, M L and Levin, I and Hattrick-Simpers, J R and Jaye, C and Fischer, D A and Takeuchi, I and De Gendt, S},
abstractNote = {This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/HfO{sub 2} system, crucial data for understanding the electrical properties of Ta-C-N/HfO{sub 2}. Combinatorial Ta-C-N 'library' (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N){sub x} forms and extends to compositions (0.3<=Ta<=0.5 and 0.57<=Ta<=0.67) that were previously unknown. The thermal stability of the Ta-C-N/HfO{sub 2} library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/HfO{sub 2}/SiO{sub 2}/Si exhibiting good thermal stability up to 950 deg. C.},
doi = {10.1063/1.3428788},
url = {https://www.osti.gov/biblio/21347443}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 96,
place = {United States},
year = {Mon May 10 00:00:00 EDT 2010},
month = {Mon May 10 00:00:00 EDT 2010}
}