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Title: Sulfur gradient-driven Se diffusion at the CdS/CuIn(S,Se){sub 2} solar cell interface

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3425666· OSTI ID:21347418
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  1. Experimentelle Physik II, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany)
  2. Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003 (United States)
  3. AVANCIS GmbH and Co. KG, Otto-Hahn-Ring 6, 81739 Muenchen (Germany)
  4. National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

The diffusion behavior of Se at the CdS/Cu(In,Ga)(S,Se){sub 2} thin film solar cell interface was investigated by x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. Buffer/absorber structures with S/Se ratios between zero and three at the initial Cu(In,Ga)(S,Se){sub 2} surface were analyzed. Samples from a high-efficiency laboratory process (NREL) as well as from an industrial large-area process (AVANCIS) were investigated. We find selenium diffusion into the CdS buffer layer, the magnitude of which strongly depends on the S content at the absorber surface. The associated modification of the heterojunction partners has significant impact on the electronic structure at the interface.

OSTI ID:
21347418
Journal Information:
Applied Physics Letters, Vol. 96, Issue 18; Other Information: DOI: 10.1063/1.3425666; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English