High-performance quantum ring detector for the 1-3 terahertz range

Journal Article · Mon Jun 07 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3447364· OSTI ID:21347402

Bhowmick, S; Huang, G; Guo, W; Lee, C S; Bhattacharya, P ^[1]; Ariyawansa, G; Perera, A G. U. ^[2]

---

1. Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
2. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)

Molecular beam epitaxy of InAs/GaAs quantum dots and their subsequent transformation to quantum rings by postepitaxy thermal annealing have been investigated. Photoconductive detectors with multiple quantum ring layers in the active region exhibit dark current density approx10{sup -8} A/cm{sup 2} at a bias of 2 V at 4.2 K. The rings have a single bound state, and emission of photoexcited carriers gives rise to a spectral response peaking at 1.82 THz (165 mum) at 5.2 K. Peak responsivity of 25 A/W, specific detectivity, D*, of 1x10{sup 16} Jones and a total quantum efficiency of 19% are measured with 1 V bias at 5.2 K. At 10 K and 1 V, D*approx3x10{sup 15} Jones is measured.

• OSTI ID: 21347402
• Journal Information: Applied Physics Letters, Vol. 96, Issue 23; Other Information: DOI: 10.1063/1.3447364; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
BOUND STATE
CRYSTAL GROWTH
CURRENT DENSITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
QUANTUM DOTS
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SPECTRAL RESPONSE
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
EFFICIENCY
EPITAXY
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
PNICTIDES