Molecular beam epitaxy-grown Bi{sub 4}Te{sub 3} nanowires

Journal Article · Mon Dec 28 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3276071· OSTI ID:21347366

Wang, G; Lok, S K; Wong, G K. L.; Sou, I K ^[1]

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1. Department of Physics and the Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)

With Au nanoparticles as the catalyst, the formation of Bi{sub 4}Te{sub 3} nanowires was achieved at an optimized substrate temperature of around 330 deg. C. We found two growth mechanisms for the nanowires: a self-assembled growth mode through islands as the seed and a vapor-solid-solid growth mode through the assistance of Au catalyst nanoparticles, the decisive factor for which was identified as the density of the Au nanoparticles.

• OSTI ID: 21347366
• Journal Information: Applied Physics Letters, Vol. 95, Issue 26; Other Information: DOI: 10.1063/1.3276071; (c) 2009 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BISMUTH TELLURIDES
CATALYSTS
CRYSTAL GROWTH
FABRICATION
GALLIUM COMPOUNDS
GOLD
MOLECULAR BEAM EPITAXY
PARTICLES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
VAPORS
BISMUTH COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
ELEMENTS
EPITAXY
FILMS
FLUIDS
GASES
MATERIALS
METALS
NANOSTRUCTURES
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENTS