Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

Journal Article · Mon Dec 28 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3280864· OSTI ID:21347365

Lee, Seunghyup; Kim, Heejin; Yong, Kijung ^[1]; Yun, Dong-Jin; Rhee, Shi-Woo ^[2]

---

1. Department of Chemical Engineering, Surface Chemistry Laboratory of Electronic Materials (SCHEMA), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
2. Department of Chemical Engineering, Laboratory for Advanced Molecular Processing (LAMP), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)

This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.

• OSTI ID: 21347365
• Journal Information: Applied Physics Letters, Vol. 95, Issue 26; Other Information: DOI: 10.1063/1.3280864; (c) 2009 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
ELECTRIC CONDUCTIVITY
GOLD
MEMORY DEVICES
PERFORMANCE
RADIOWAVE RADIATION
RANDOMNESS
SEMICONDUCTOR MATERIALS
SPUTTERING
STAINLESS STEELS
SUBSTRATES
THIN FILMS
ZINC OXIDES
ALLOYS
CARBON ADDITIONS
CHALCOGENIDES
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
HIGH ALLOY STEELS
IRON ALLOYS
IRON BASE ALLOYS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
STEELS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENTS
ZINC COMPOUNDS