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Title: Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.
Authors: ; ; ; ; ; ;
Publication Date:
OSTI Identifier:OSTI ID: 21347357
Resource Type:Journal Article
Resource Relation:Journal Name: Applied Physics Letters; Journal Volume: 96; Journal Issue: 14; Other Information: DOI: 10.1063/1.3374331; (c) 2010 American Institute of Physics
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; CRYSTAL GROWTH; DEPOSITION; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; PLASMA; POLARIZATION; SEMICONDUCTOR MATERIALS; THREE-DIMENSIONAL CALCULATIONS; TRANSISTORS; TWO-DIMENSIONAL CALCULATIONS CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; PARTICLE MOBILITY; PNICTIDES; SEMICONDUCTOR DEVICES