Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

Journal Article · Mon May 31 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3429586· OSTI ID:21347336

Seo, Hyungtak ^[1]; Cho, Young-Je; Bobade, Santosh M; Park, Kyoung-Youn; Choi, Duck-Kyun ^[2]; Kim, Jinwoo ^[3]; Lee, Jaegab ^[4]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
3. Department of Materials Sciences and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
4. School of Advanced Materials Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to approx10{sup 18} cm{sup -3} from the background level of 10{sup 16} cm{sup -3}, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at approx10{sup 8} and field-effect mobility at 22.7 cm{sup 2}/V s.

• OSTI ID: 21347336
• Journal Information: Applied Physics Letters, Vol. 96, Issue 22; Other Information: DOI: 10.1063/1.3429586; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARRIER DENSITY
CARRIER MOBILITY
DOPED MATERIALS
ELECTRONS
FERMI LEVEL
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
METALS
MULTI-PHOTON PROCESSES
OXIDES
PHOTONS
SCAVENGING
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSISTORS
ULTRAVIOLET RADIATION
BOSONS
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
FERMIONS
FILMS
LEPTONS
MASSLESS PARTICLES
MATERIALS
MOBILITY
OXYGEN COMPOUNDS
RADIATIONS
SEMICONDUCTOR DEVICES
TEMPERATURE RANGE