Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission

Journal Article · Mon Mar 15 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3358122· OSTI ID:21347322

Urbanczyk, A; Hamhuis, G J; Noetzel, R ^[1]

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1. Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.

• OSTI ID: 21347322
• Journal Information: Applied Physics Letters, Vol. 96, Issue 11; Other Information: DOI: 10.1063/1.3358122; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
CRYSTAL GROWTH
EMISSION SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PLASMONS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
STRAINS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
PNICTIDES
QUASI PARTICLES
SPECTRA