Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

Journal Article · Mon Mar 01 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3353973· OSTI ID:21347305

Jang, Moon Hyung; Park, Seung Jong; Lim, Dong Hyeok; Park, Sung Jin; Cho, Mann-Ho ^[1]; Cho, Seong Jin ^[2]; Cho, Yoon Ho; Lee, Jong-Heun ^[3]

---

1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
2. Department of Physics, Kyungseong University, Pusan 608-736 (Korea, Republic of)
3. Division of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

Oxygen incorporated Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) films were prepared by an ion beam sputtering deposition method. I-V curves of the oxygen incorporated GST active layer showed that the threshold voltage (V{sub th}) varied, depending on the level of incorporated oxygen. In the case of a GST film with an elevated oxygen content of 30.8%, the GST layer melted at 9.02 V due to the instability conferred by the high oxygen content. The formation of Ge-deficient hexagonal phases such as GeSb{sub 2}Te{sub 4} and Sb{sub 2}Te{sub 3} appear to be responsible for the V{sub th} variation. Impedance analyses indicated that the resistance in GST films with oxygen contents of 16.7% and 21.7% had different origins. Thermal desorption spectroscopy data indicate that moisture and hydrocarbons were more readily desorbed at higher oxygen content because the oxygen incorporated GST films are more hydrophilic than undoped GST films.

• OSTI ID: 21347305
• Journal Information: Applied Physics Letters, Vol. 96, Issue 9; Other Information: DOI: 10.1063/1.3353973; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY ALLOYS
ANTIMONY TELLURIDES
DEPOSITION
DESORPTION
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
GERMANIUM ALLOYS
HYDROCARBONS
IMPEDANCE
ION BEAMS
LAYERS
MOISTURE
OXYGEN
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SPUTTERING
TELLURIUM ALLOYS
THIN FILMS
ALLOYS
ANTIMONY COMPOUNDS
BEAMS
CHALCOGENIDES
ELEMENTS
FILMS
MATERIALS
NONMETALS
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
SORPTION
TELLURIDES
TELLURIUM COMPOUNDS