Electrical properties of C-doped p-type GaP and GaPN grown by molecular beam epitaxy

Journal Article · Mon Jan 18 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3291664· OSTI ID:21347244

Zhengxin, Liu; Kawanami, Hitoshi; Sakata, Isao ^[1]

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1. National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan)

The electrical properties of C-doped p-type GaP and GaPN epilayers grown by molecular beam epitaxy using CBr{sub 4} as a doping source have been investigated. C is shown to be a relatively shallow acceptor both in GaP and GaPN, with the activation energy in the regions of 16-33 and 18-35 meV, respectively. GaP demonstrates ordinary conduction characteristics, whereas GaPN has a typical mixed conduction effect and the impurity conduction becomes dominant at low temperatures. It is conjectured that impurity conduction and ionized impurity scattering mechanisms in GaPN may be related to the inactivated C and N radicals.

• OSTI ID: 21347244
• Journal Information: Applied Physics Letters, Vol. 96, Issue 3; Other Information: DOI: 10.1063/1.3291664; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CARBON
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GALLIUM PHOSPHIDES
IMPURITIES
LAYERS
MOLECULAR BEAM EPITAXY
RADICALS
SCATTERING
SEMICONDUCTOR MATERIALS
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
NONMETALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES