Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

Journal Article · Mon Jan 11 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3291666· OSTI ID:21347238

Luna, E; Satpati, B; Trampert, A ^[1]; Rodriguez, J B; Baranov, A N; Tournie, E ^[2]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
2. Universite Montpellier 2, CNRS, UMR 5214, IES, CC 067, Place Eugene Bataillon, F-34095 Montpellier cedex 5 (France)

The unique properties of the noncommon-atom InAs/GaSb short-period-superlattices (SPSL) strongly depend on the interface structure. These interfaces are characterized using transmission electron microscopy (TEM). The compositional sharpness is obtained from the comparison of the experimental contrast in g{sub 002} two-beam dark-field TEM images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions. The interfacial intermixing, defined by the chemical width, is obtained for SPSL with different periods and layer thicknesses, even in the extreme case of nominally less than 3 ML thick InAs layers. Nominal 1 ML InSb layers intentionally inserted are also identified.

• OSTI ID: 21347238
• Journal Information: Applied Physics Letters, Vol. 96, Issue 2; Other Information: DOI: 10.1063/1.3291666; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ANTIMONIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
SEMICONDUCTOR MATERIALS
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
MICROSCOPY
PNICTIDES