Colloidal crystal formation in a semiconductor quantum plasma
- Department of Physics, GC University, 54000 Lahore (Pakistan)
- Theoretische Physik IV, Ruhr-Universitaet Bochum, D-44780 Bochum (Germany)
The static shielding and the far-field dynamical oscillatory wake potentials in an ion-implanted piezoelectric semiconductor with colloid ions as test particles have been investigated in detail. The dielectric response function of the semiconductor is contributed by the quantum effect of electrons through the Bohm potential and lattice electron-phonon coupling effects. It is found that the quantum effect causes tighter binding of the electrons reducing the quantum Debye shielding length and the effective length of the wake potential to several angstroms. Hence, a quasiquantum lattice of colloid ions can be formed in the semiconductor in the quantum scales giving rise to drastic modifications of the ion-implanted semiconductor properties.
- OSTI ID:
- 21347155
- Journal Information:
- Physics of Plasmas, Vol. 17, Issue 3; Other Information: DOI: 10.1063/1.3334376; (c) 2010 American Institute of Physics; ISSN 1070-664X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COLLOIDS
CRYSTALS
DEBYE LENGTH
DIELECTRIC PROPERTIES
ELECTRON-PHONON COUPLING
ELECTRONS
QUANTUM PLASMA
RESPONSE FUNCTIONS
SEMICONDUCTOR MATERIALS
TEST PARTICLES
COUPLING
DIMENSIONS
DISPERSIONS
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
FUNCTIONS
LENGTH
LEPTONS
MATERIALS
PHYSICAL PROPERTIES
PLASMA