Enhanced shot noise in carbon nanotube field-effect transistors

Journal Article · Mon Dec 21 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3274128· OSTI ID:21304995

Betti, A; Fiori, G; Iannaccone, G ^[1]

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1. Dipartimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, Universita di Pisa, Via Caruso 16, I-56122 Pisa (Italy)

We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schroedinger equations within the nonequilibrium Green's functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from the drain into quasibound states in the channel and thermionic injection of electrons from the source, and can lead to an appreciable Fano factor of 1.22 at room temperature.

• OSTI ID: 21304995
• Journal Information: Applied Physics Letters, Vol. 95, Issue 25; Other Information: DOI: 10.1063/1.3274128; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
CARBON
ELECTRONS
FANO FACTOR
FIELD EFFECT TRANSISTORS
GREEN FUNCTION
HOLES
MATHEMATICAL SOLUTIONS
MONTE CARLO METHOD
NANOTUBES
NOISE
PHOTOEMISSION
POISSON EQUATION
QUASIBOUND STATE
SCHROEDINGER EQUATION
STATISTICS
TEMPERATURE RANGE 0273-0400 K