The consequence of continuous current branching on current-noise spectra in field-effect and high-electron mobility transistors

Journal Article · Thu Apr 23 00:00:00 EDT 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3140448· OSTI ID:21304849

Starikov, E; Shiktorov, P; Gruzinskis, V ^[1]; Varani, L; Marinchio, H ^[2]; Reggiani, L ^[3]

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1. Semiconductor Physics Institute, A. Gostauto 11, LT 01108 Vilnius (Lithuania)
2. Institut d'Electronique du Sud (CNRS UMR 5214), Universite Montpellier II, 34 095 Montpellier Cedex 5 (France)
3. Dipartimento di Ingegneria dell'Innovazione and CNISM, Universita del Salento, Via Arnesano s/n, 73100 Lecce (Italy)

The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.

• OSTI ID: 21304849
• Journal Information: AIP Conference Proceedings, Vol. 1129, Issue 1; Conference: ICNF-2009: 20. international conference on noise and fluctuations, Pisa (Italy), 14-19 Jun 2009; Other Information: DOI: 10.1063/1.3140448; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRON MOBILITY
ELECTRONS
EXCITATION
FIELD EFFECT TRANSISTORS
INTERFERENCE
MATHEMATICAL MODELS
NOISE
PLASMA WAVES