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Title: Light emitting field effect transistor with two self-aligned Si nanocrystal layers

Abstract

Light emitting field effect transistors based on narrow layers of silicon nanocrystals (NCs) in the gate oxide were fabricated. Direct quantum mechanical electron and hole tunneling into NCs was achieved by self-alignment of NCs-interface-distances to {approx}2 nm. The direct tunneling reduces oxide degradation, prolongs device lifetime and increases operation speed. Self-alignment occurs during thermal treatment of ion irradiated stacks of 50 nm polycrystalline silicon/15 nm SiO{sub 2}/(001)Si substrate. An alternating voltage (ac) was applied to the gate to inject charges into the NCs. Due to injection by direct tunneling, electroluminescence extends to higher ac frequencies than reported so far.

Authors:
; ;  [1];  [2]
  1. Forschungszentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 51 01 19, D-01314 Dresden (Germany)
  2. Signet Solar GmbH, Am Fuchsloch 10, D-04720 Mochau (Germany)
Publication Date:
OSTI Identifier:
21294443
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 95; Journal Issue: 19; Other Information: DOI: 10.1063/1.3242379; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRONS; FIELD EFFECT TRANSISTORS; HEAT TREATMENTS; HOLES; ION BEAMS; IONS; LAYERS; NANOSTRUCTURES; POLYCRYSTALS; QUANTUM MECHANICS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SUBSTRATES; TUNNEL EFFECT; VISIBLE RADIATION

Citation Formats

Beyer, V, Schmidt, B, Heinig, K -H, and Stegemann, K -H. Light emitting field effect transistor with two self-aligned Si nanocrystal layers. United States: N. p., 2009. Web. doi:10.1063/1.3242379.
Beyer, V, Schmidt, B, Heinig, K -H, & Stegemann, K -H. Light emitting field effect transistor with two self-aligned Si nanocrystal layers. United States. https://doi.org/10.1063/1.3242379
Beyer, V, Schmidt, B, Heinig, K -H, and Stegemann, K -H. 2009. "Light emitting field effect transistor with two self-aligned Si nanocrystal layers". United States. https://doi.org/10.1063/1.3242379.
@article{osti_21294443,
title = {Light emitting field effect transistor with two self-aligned Si nanocrystal layers},
author = {Beyer, V and Schmidt, B and Heinig, K -H and Stegemann, K -H},
abstractNote = {Light emitting field effect transistors based on narrow layers of silicon nanocrystals (NCs) in the gate oxide were fabricated. Direct quantum mechanical electron and hole tunneling into NCs was achieved by self-alignment of NCs-interface-distances to {approx}2 nm. The direct tunneling reduces oxide degradation, prolongs device lifetime and increases operation speed. Self-alignment occurs during thermal treatment of ion irradiated stacks of 50 nm polycrystalline silicon/15 nm SiO{sub 2}/(001)Si substrate. An alternating voltage (ac) was applied to the gate to inject charges into the NCs. Due to injection by direct tunneling, electroluminescence extends to higher ac frequencies than reported so far.},
doi = {10.1063/1.3242379},
url = {https://www.osti.gov/biblio/21294443}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 95,
place = {United States},
year = {Mon Nov 09 00:00:00 EST 2009},
month = {Mon Nov 09 00:00:00 EST 2009}
}