Ionization equilibrium in an excited semiconductor: Mott transition versus Bose-Einstein condensation

Journal Article · Thu Oct 15 00:00:00 EDT 2009 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.80.155201· OSTI ID:21294409

Semkat, D; Richter, F; Kremp, D; Manzke, G; Kraeft, W -D; Henneberger, K ^[1]

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1. Institut fuer Physik, Universitaet Rostock, 18051 Rostock (Germany)

The ionization equilibrium of an electron-hole plasma in a highly excited semiconductor is investigated. Special attention is directed to the influence of many-particle effects such as screening and lowering of the ionization energy causing, in particular, the Mott effect (density ionization). This effect limits the region of existence of excitons and, therefore, of a possible Bose-Einstein condensate at low temperatures. Results for the chemical potential and the degree of ionization are presented for zinc selenide (ZnSe). A possible window for the occurrence of a Bose-Einstein condensate of excitons is shown, taking into account the Mott effect.

• OSTI ID: 21294409
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 80, Issue 15; Other Information: DOI: 10.1103/PhysRevB.80.155201; (c) 2009 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOSE-EINSTEIN CONDENSATION
DENSITY
EQUILIBRIUM
EXCITONS
IONIZATION
PARTICLES
SCREENING
SEMICONDUCTOR MATERIALS
SOLID-STATE PLASMA
TEMPERATURE RANGE 0065-0273 K
ZINC
ZINC SELENIDES