Mg doping and its effect on the semipolar GaN(1122) growth kinetics

Journal Article · Mon Oct 26 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3256189· OSTI ID:21294376

Lahourcade, L; Wirthmueller, A; Monroy, E ^[1]; Pernot, J ^[2]; Chauvat, M P; Ruterana, P ^[3]; Laufer, A; Eickhoff, M ^[4]

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1. Equipe mixte CEA-CNRS 'Nanophysique et Semiconducteurs', CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble (France)
2. Institut NEEL, CNRS and Universite Joseph Fourier, BP166, 38042 Grenoble Cedex 9 (France)
3. CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, 6 Boulevard du Marechal Juin, 14050 Caen (France)
4. I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, 35392 Giessen (Germany)

We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

• OSTI ID: 21294376
• Journal Information: Applied Physics Letters, Vol. 95, Issue 17; Other Information: DOI: 10.1063/1.3256189; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DOPED MATERIALS
GALLIUM NITRIDES
MAGNESIUM
MOLECULAR BEAM EPITAXY
SEGREGATION
SEMICONDUCTOR MATERIALS
SURFACTANTS
THIN FILMS