Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces

Journal Article · Mon Oct 12 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3229889· OSTI ID:21294365

Wu, J H; Ye, W; Cardozo, B L; Saltzman, D; Sun, K; Sun, H; Mansfield, J F; Goldman, R S ^[1]

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1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga{sup +} FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence)

• OSTI ID: 21294365
• Journal Information: Applied Physics Letters, Vol. 95, Issue 15; Other Information: DOI: 10.1063/1.3229889; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COALESCENCE
CRYSTAL GROWTH
DIFFUSION
DROPLETS
GALLIUM
GALLIUM ARSENIDES
GALLIUM IONS
HOLES
ION BEAMS
LAYERS
PRECIPITATION
SEMICONDUCTOR MATERIALS
SUBSTRATES