Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices

Journal Article · Mon Oct 05 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3245313· OSTI ID:21294352

Goh, K E. J. ^[1]; Simmons, M Y ^[1]

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1. Australian Research Council Centre of Excellence for Quantum Computer Technology and School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia)

We address the impact of Si growth rate on electron transport in Si:P {delta}-doped devices encapsulated by low temperature Si molecular beam epitaxy. Si growth rates ranging from 0.05 to 2.2 A s{sup -1} were used in conjunction with 250 deg. C Si overgrowth. Using a combination of scanning tunneling microscopy and 4.2 K magnetotransport measurements, we find that high growth rates tend to degrade the crystal quality of the Si cap layer resulting in shorter electron mean free path and phase coherence length in such devices.

• OSTI ID: 21294352
• Journal Information: Applied Physics Letters, Vol. 95, Issue 14; Other Information: DOI: 10.1063/1.3245313; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COHERENCE LENGTH
CRYSTAL GROWTH
CRYSTALS
DOPED MATERIALS
ELECTRONS
LAYERS
MEAN FREE PATH
MOLECULAR BEAM EPITAXY
PHOSPHORUS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON