Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation

Kubala-Kukus, A; Banas, D; Pajek, M; Cao, W; Dousse, J -Cl; Hoszowska, J; Kayser, Y; Szlachetko, M; Salome, M; Susini, J; Szlachetko, J

doi:10.1103/PHYSREVB.80.113305

Title: Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation

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Abstract

We demonstrate that ultralow-level Al impurities on a silicon surface can be measured by using the high-resolution grazing emission x-ray fluorescence (GEXRF) technique combined with synchrotron-radiation excitation. An Al-impurity level of about 10{sup 12} atoms/cm{sup 2} was reached by observing the Al K{alpha} x-ray fluorescence in the resonant Raman-scattering background-''free'' regime by choosing an appropriate beam energy below the Si K absorption edge. Present results show that by combining the GEXRF method with the vapor phase decomposition technique the 10{sup 7} atoms/cm{sup 2} level can be reached for Al detection on silicon. Finally, we found that the high-resolution GEXRF technique is a sensitive tool to study the morphology of surface nanostructures.

Authors:

Kubala-Kukus, A; Banas, D; Pajek, M ^[1]; Cao, W; Dousse, J -Cl; Hoszowska, J; Kayser, Y; Szlachetko, M ^[2]; Salome, M; Susini, J ^[3]; Szlachetko, J ^[1]

Institute of Physics, Jan Kochanowski University, 25-406 Kielce (Poland)
Department of Physics, University of Fribourg, CH-1700 Fribourg (Switzerland)
European Synchrotron Radiation Facility (ESRF), F-38043 Grenoble (France)

Publication Date:: Tue Sep 15 00:00:00 EDT 2009

OSTI Identifier:: 21294337

Resource Type:: Journal Article

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Volume: 80; Journal Issue: 11; Other Information: DOI: 10.1103/PhysRevB.80.113305; (c) 2009 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1098-0121

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ALUMINIUM OXIDES; DECOMPOSITION; DETECTION; EMISSION SPECTRA; EXCITATION; FLUORESCENCE; IMPURITIES; K ABSORPTION; NANOSTRUCTURES; RAMAN EFFECT; RAMAN SPECTRA; RESOLUTION; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; SYNCHROTRON RADIATION; VAPORS; X RADIATION; X-RAY SPECTRA

Citation Formats


                    Kubala-Kukus, A, Banas, D, Pajek, M, Cao, W, Dousse, J -Cl, Hoszowska, J, Kayser, Y, Szlachetko, M, Salome, M, Susini, J, Szlachetko, J, and Department of Physics, University of Fribourg, CH-1700 Fribourg. Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation.  United States: N. p., 2009. 
        Web.  doi:10.1103/PHYSREVB.80.113305.

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                    Kubala-Kukus, A, Banas, D, Pajek, M, Cao, W, Dousse, J -Cl, Hoszowska, J, Kayser, Y, Szlachetko, M, Salome, M, Susini, J, Szlachetko, J, & Department of Physics, University of Fribourg, CH-1700 Fribourg. Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation.  United States.  https://doi.org/10.1103/PHYSREVB.80.113305

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                    Kubala-Kukus, A, Banas, D, Pajek, M, Cao, W, Dousse, J -Cl, Hoszowska, J, Kayser, Y, Szlachetko, M, Salome, M, Susini, J, Szlachetko, J, and Department of Physics, University of Fribourg, CH-1700 Fribourg. 2009.  
        "Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation".  United States.  https://doi.org/10.1103/PHYSREVB.80.113305.

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@article{osti_21294337,

  title        = {Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation},

  author       = {Kubala-Kukus, A and Banas, D and Pajek, M and Cao, W and Dousse, J -Cl and Hoszowska, J and Kayser, Y and Szlachetko, M and Salome, M and Susini, J and Szlachetko, J and Department of Physics, University of Fribourg, CH-1700 Fribourg},

  abstractNote = {We demonstrate that ultralow-level Al impurities on a silicon surface can be measured by using the high-resolution grazing emission x-ray fluorescence (GEXRF) technique combined with synchrotron-radiation excitation. An Al-impurity level of about 10{sup 12} atoms/cm{sup 2} was reached by observing the Al K{alpha} x-ray fluorescence in the resonant Raman-scattering background-''free'' regime by choosing an appropriate beam energy below the Si K absorption edge. Present results show that by combining the GEXRF method with the vapor phase decomposition technique the 10{sup 7} atoms/cm{sup 2} level can be reached for Al detection on silicon. Finally, we found that the high-resolution GEXRF technique is a sensitive tool to study the morphology of surface nanostructures.},

  doi          = {10.1103/PHYSREVB.80.113305},

  url          = {https://www.osti.gov/biblio/21294337},
  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  issn         = {1098-0121},

  number       = 11,

  volume       = 80,

  place        = {United States},

  year         = {Tue Sep 15 00:00:00 EDT 2009},

  month        = {Tue Sep 15 00:00:00 EDT 2009}

}

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